30-250V小体积大电流DFN3*3-8、TO-252、SOP-8、SOT23-3、SOT89-3全系列NMOS和PMOS
产品不断更新，请跟我司销售员联系
不同的mos管特点不一样，简单描述如下：
平面mos：
优点：EAS雪崩等参数比较大，很耐电流冲击。缺点是：结电容等非常大，开关损耗非常大。驱动电流比较大，不好驱动。
SGT工艺mos：
优点：Qg、Ciss等参数很小，开关损耗非常小，适合高频开关，特别是电流上来之后。驱动电压低，驱动电流小，非常好驱动，对芯片驱动要求不高。
缺点：EAS雪崩等参数比较小。
沟槽mos：
则是介于平面mos管跟SGTmos之间。
由于mos管的损耗=导通内阻损耗+mos管开关损耗，同等内阻的情况下，SGT工艺的mos管结电容Qg跟Ciss最小，所以开关损耗是非常小的，高频大电流的情况下，mos管开关损耗可能占整体损耗的90%。mos管另外需要关注开启电压Vth、Vgs耐压等。
mos管选型建议：
1、需要扛电流冲击的，普通逻辑开关或者工作频率很低比如50kHZ以内的，电流非常大的情况比如实际工作6A以上的话一般建议选择平面mos管。6A以内的应用，大电流沟槽型mos管即可。
2、需要高频开关，比如500kHZ以上的，则需要选择沟槽型或者SGT型的mos管，开关损耗占比非常小。
3、普通的PWM控制芯片搭配，应用于控制脉宽调制的，100-300KHZ芯片开关工作频率的话，可以选择沟槽型或者SGT型号，根据电流大小及开关频率决定。此应用领域相对来说SGT的产品性能会好很多，但是价格相对高些。mos管的损耗=导通内阻损耗+mos管开关损耗。
4、一些对空间体积要求非常好的应用，一般选择小体积超薄封装DFN的mos管，特别是电流较大工作频率较高的时候。
5、我司的mos管产品不适合电动车控制器比如80V100A、150A、200A那种等需要扛大电流冲击的应用领域。最适合用的领域就是芯片+mos管的驱动方式、5A以内的普通逻辑开关或者高频开关应用。
| 20-250V N沟道MOSFET |
型号 | 封装 | Rdson (VGS= 10V) | Rdson ( VGS=4.5V) | Bvdss | ID | Ciss | type Vth | 类型 |
| HCC2300 
|
SOT23
| /
| 15mΩ | 20V
| 7A
| /
| 0.65V
| 沟槽型NMOS |
| HCC2302
|
SOT23
| /
| 54mΩ | 20V
| 3A
| /
| 0.65V
| 沟槽型NMOS |
HCK002N02L
|
TO-252
| / | 2.4mΩ | 20V | 125A | 5670pF | 0.7V | 沟槽型NMOS |
HCE002N02L 
| PDFN5*6 |
/
| 2.4mΩ | 20V | 125A | 5670pF | 0.7V | 沟槽型NMOS |
HCE001N02L
| PDFN5*6 |
/
| 1mΩ | 20V | 190A | / | 0.7V | 沟槽型NMOS |
HCC027N03L 
| SOT23 |
20mΩ
| 30mΩ | 30V | 7A | / | 1.5V | 沟槽型NMOS |
HCD027N03L
| |
17mΩ
| 27mΩ | 30V | 33A | / | 1.5V | 沟槽型NMOS |
HCK027N03L
| TO-252 |
17mΩ
| 27mΩ | 30V | 35A | / | 1.5V | 沟槽型MOS |
HG3019P
|
SOT89-3
| / | 5mΩ | 30V | 50A | 745pF | 1.8V | SGT工艺NMOS |
HCD004N03L
| PDFN3*3 |
4.5mΩ
| 7.3mΩ | 30V | 90A | 1760pF | 1.8V | 沟槽型NMOS |
HCE004N03L
|
PDFN5*6
| 4.5mΩ | 7.3mΩ | 30V | 90A | 1760pF | 1.8V | 沟槽型NMOS |
HC90N03M
|
TO-252
| 4.5mΩ | 7.3mΩ | 30V | 90A | 1760pF | 1.8V | 沟槽型NMOS |
HCK003N03L
| |
2.8mΩ
| 4.3mΩ | 30V | 120A | 2764pF | 1.5V | 沟槽型NMOS |
HCE003N03L
| PDFN5*6 |
2.7mΩ
| 4.2mΩ | 30V | 120A | 2764pF | 1.5V | 沟槽型NMOS |
HG004N03L
|
TO-252
| 4.8mΩ | 7.8mΩ | 30V | 75A | 745pF | 1.8V | SGT工艺NMOS |
HC005N03L
| TO-252 |
5.8mΩ
| 9mΩ | 30V | 70A | 1110pF | 1.8V | 沟槽型NMOS |
HC006N03M |
TO-252
| 6.1mΩ | 8mΩ | 30V | 62A | 1264pF | 1.5V | 沟槽型NMOS |
HG3019D
| | 4.8mΩ
| 7.8mΩ | 30V | 68A | 745pF | 1.8V | SGT工艺NMOS |
HC009N03L
| |
8mΩ
| 12mΩ | 30V | 55A | 920pF | 1.5V | 沟槽型NMOS |
HCK008N03M 
|
TO-252
| 8mΩ | 12mΩ | 30V | 55A | / | 1.5V | 沟槽型NMOS |
HC3022D
|
PDFN3*3
| 7.5mΩ | 13mΩ | 30V | 45A | 852pF | 1.8V | 沟槽型NMOS |
HC3039P |
SOT89-3
| / | 18mΩ | 30V | 20A | 445pF | 1.8V | 沟槽型NMOS |
HC3039D
|
PDFN3*3
| 12.5mΩ | 24mΩ | 30V | 25A | 459pF | 1.8V | 沟槽型NMOS |
HC020N03L
|
TO-252
| 13mΩ | 22mΩ | 30V | 30A | 445pF | 1.6V | 沟槽型NMOS |
HC013N03M
|
TO-252
| 13mΩ | 16mΩ | 30V | 40A | / | 1.5V | 沟槽型NMOS |
HC3600M
|
SOT23-3L
| 16mΩ | 22mΩ | 30V | 8A | 445pF | 1.6V | 沟槽型NMOS |
HC3400M
| SOT23-3L |
21mΩ
| 22mΩ | 30V | 5.8A | 635pF | 0.85V | 沟槽型NMOS |
HC3600G
| SOT23 | 21mΩ
| 35mΩ | 30V | 4.5A | 330pF | 1.8V | 沟槽型NMOS |
HC3400Y
| |
/
| 27mΩ | 30V | 5.8A | 835pF | 0.85V | 沟槽型NMOS |
HC3404Y
| SOT23 |
/
| 27mΩ | 30V | 5.7A | 835pF | 1.5V | 沟槽型NMOS |
HC030N03L
| TO-252 | /
| 25mΩ | 30V | 20A | 745pF | 0.8V | 沟槽型NMOS |
HC3400S
|
SOT23
| / | 45mΩ | 30V | 4A | 235pF | 0.8V | 沟槽型NMOS |
HC3N04
|
SOT23
| 76mΩ | 83mΩ | 40V | 3A | 200pF | 1.2V | 沟槽型NMOS |
HC4N04
| SOT23 |
30mΩ
| 38mΩ | 40V | 4A | 381pF | 1.5V | 沟槽型NMOS |
HC5N04
|
SOT23-3L
| 15mΩ | 21mΩ | 40V | 6.5A | 681pF | 1.5V | 沟槽型NMOS |
HC4012D
| PDFN3*3 |
6.9mΩ
| 8.2mΩ | 40V | 38A | 2094pF | 1.5V | 沟槽型NMOS |
HCD40N11L
| PDFN3*3 |
2.9mΩ
| 3.5mΩ | 40V | 90A | / | 1.5V | 沟槽型NMOS |
HCE40N11L
| PDFN5*6 |
2.9mΩ
| 3.7mΩ | 40V | 120A | 6130pF | 1.5V | 沟槽型NMOS |
HC007N04L
| TO-252 |
6.7mΩ
| 7.9mΩ | 40V | 57A | 2094pF | 1.5V | 沟槽型NMOS |
HCK003N04L
| TO-252 |
2.9mΩ
| 3.7mΩ | 40V | 130A | 6130pF | 1.5V | 沟槽型NMOS |
HGK001N04L
| TO-252 |
1.6mΩ
| 2mΩ | 40V | 190A | / | 1.7V | SGT工艺NMOS |
HGE001N04L
| PDFN5*6 |
1.6mΩ
| 2mΩ | 40V | 170A | / | 1.7V | SGT工艺NMOS |
HGK004N04
| TO-252 |
5.2mΩ
| 7mΩ | 40V | 85A | 1105pF | 1.7V | SGT工艺NMOS |
HGE004N04L
| PDFN5*6 |
5.2mΩ
| 7mΩ | 40V | 85A | 1105pF | 1.7V | SGT工艺NMOS |
HGD004N04L
| PDFN3*3 |
5.2mΩ
| 7mΩ | 40V | 72A | 1105pF | 1.7V | SGT工艺NMOS |
HCK004N04L
| TO-252 |
3.9mΩ
| 5.5mΩ | 40V | 95A | 3260pF | 1.7V | 沟槽型NMOS |
HCE004N04L
| |
3.9mΩ
| 5.5mΩ | 40V | 95A | 3260pF | 1.7V | 沟槽型NMOS |
HCD004N04L
| |
3.9mΩ
| 5.5mΩ | 40V | 75A | 3260pF | 1.7V | 沟槽型NMOS |
HC7002
| SOT23 |
/
| 1.6Ω | 60V | 0.1A | / | 1.8V | 沟槽型NMOS |
HG008N06LS
| SOP-8 |
8mΩ
| 10mΩ | 60V | 16A | 660pF | 1.6V | SGT工艺NMOS |
HCK007N06L
| |
7.5mΩ
| 10mΩ | 60V | 65A | / | 1.5V | 沟槽型NMOS |
HG6025P
| |
8mΩ
| 10mΩ | 60V | 65A | 650pF | 1.8V | SGT工艺NMOS |
型号 | 封装 | Rdson (VGS=10V) | Rdson (VGS=4.5V) | Bvdss | ID | Ciss | type Vth | 类型 |
HG008N06L
|
TO-252
|
8mΩ
| 10mΩ | 60V | 70A | 650pF | 1.8V | SGT工艺NMOS |
HCK007N06L
|
TO-252
|
7.5mΩ
| 10mΩ | 60V | 65A | / | 1.5V | 沟槽型NMOS |
HG012N06HS
|
SOP-8
|
10.5mΩ
| 17mΩ | 60V | 13A | 780pF | 1.8V | SGT工艺NMOS |
HG5511D
|
PDFN3*3
| 11mΩ
| 14mΩ | 60V | 40A | 550pF | 2V | SGT工艺NMOS |
HG6037D
|
PDFN3*3
| 10mΩ
| 14mΩ | 60V | 40A | 742pF | 1.7V | SGT工艺NMOS |
HG012N06H
|
TO-252
|
11mΩ
| 15mΩ | 160V | 50A | 550pF | 1.8V | SGT工艺NMOS |
HG011N06L
| TO-252
|
10Ω
| 14mΩ | 60V | 50A | 742pF | 1.7V | SGT工艺NMOS |
HG6013P
| SOT89-3 |
11mΩ
| 15mΩ | 60V | 40A | 550pF | 1.6V | SGT工艺NMOS |
HG6037P
|
SOT89-3
| /
| 13mΩ | 60V | 40A | / | 1.6V | SGT工艺NMOS |
HC6013P
|
SOT89-3
| / | 17mΩ | 60V | 40A | 1050pF | 1.8V | 沟槽型NMOS |
HC017N06L
|
TO-252
| 17mΩ | 21mΩ | 60V | 40A | 1030pF | 1.5V | 沟槽型NMOS |
HC015N06L
|
TO-252
| 12mΩ | 15mΩ | 60V | 50A | 1050pF | 1.5V | 沟槽型NMOS |
HC010N06L
|
TO-252
| 8.9mΩ | 10mΩ | 60V | 60A | / | 1.5V | 沟槽型NMOS |
HC037N06L
|
TO-252
| 28mΩ | 30mΩ | 60V | 30A | 650pF | 1.8V | SGT工艺NMOS |
HC031N06L
|
TO-252
| 26mΩ | 36mΩ | 60V | 25A | 1082pF | 1.6V | SGT工艺NMOS |
HCD031N06L
|
PDFN3*3
| 26mΩ | 30mΩ | 60V | 25A | 1082pF | 1.6V | 沟槽型NMOS |
HCP031N06L
|
SOT89-3
| 26mΩ | 36mΩ | 60V | 12A | 1082pF | 1.6V | 沟槽型NMOS |
HC6019D
|
PDFN3*3
| 29mΩ | 32mΩ | 60V | 20A | 650pF | 1.6V | 沟槽型NMOS |
HC037N06LS
|
SOP-8
| 31mΩ | 34mΩ | 60V | 8A | 650pF | 1.8V | 沟槽型NMOS |
HC070N06L
|
SOT23
| 65mΩ | 80mΩ | 60V | 15A | 435pF | 1.5V | 沟槽型NMOS |
HC706
|
SOP8
| 60mΩ | 70mΩ | 60V | 7A | 435pF | 1.8V | 沟槽型NMOS |
HC070N06LS
|
SOT23
| 65mΩ | 80mΩ | 60V | 6A | 435pF | 1.5V | 沟槽型NMOS |
HGE004N06L
|
PDFN5*6
| 4.7mΩ | 6.5mΩ | 60V | 90A | 2133pF | 1.8V | SGT工艺NMOS |
HGK004N06
|
TO-252
| 4.7mΩ | 6.5mΩ | 60V | 90A | 2133pF | 1.8V | SGT工艺NMOS |
HGA004N06L
|
TO-263
| 4mΩ | 6mΩ | 60V | 120A | / | 1.8V | SGT工艺NMOS |
HGA008N06L
|
TO-220
| 8mΩ | 10mΩ | 60V | 70A | 650pF | 1.8V | SGT工艺NMOS |
HCA006N68H
|
TO-220
| 5.2mΩ | / | 68V | 100A | 4723pF | 3V | 沟槽型NMOS |
HC230N08LS
|
SOT23
| 230mΩ | 255mΩ | 85V | 4A | 405pF | 1.8V | 沟槽型NMOS |
HG008N10L
|
TO-252
| 8mΩ | 10mΩ | 100V | 82A | 1406pF | 1.7V | SGT工艺NMOS |
HG1015DA
| PDFN5*6 | 9mΩ | 12mΩ | 100V | 70A | 1630pF | 1.5V | SGT工艺NMOS |
HG010N10L
|
TO-252
| 9mΩ | 12mΩ | 100V | 70A | 1630pF | 1.5V | SGT工艺NMOS |
HG1006DA
|
PDFN5*6
| 20mΩ | 24mΩ | 100V | 25A | 839pF | 1.6V | SGT工艺NMOS |
HG018N10LS
|
SOP-8
| 20mΩ | 24mΩ | 100V | 12A | 839pF | 1.7V | SGT工艺NMOS |
HC1006D
|
PDFN3*3
| 22mΩ | 24mΩ | 100V | 30A | 2100pF | 1.3V | 沟槽型NMOS |
HC025N10L
|
TO-252
| 24mΩ | 28mΩ | 100V | 45A | 2000pF | 1.2V | 沟槽型NMOS |
HC032N10L
|
TO-252
| 32mΩ | 37mΩ | 100V | 30A | 1800pF | 1.5V | 沟槽型NMOS |
HC8N10
|
SOP-8
| 27mΩ | 28mΩ | 100V | 8A | 2000pF | 1.2V | 沟槽型NMOS |
HG021N10L
| TO-252
| 25mΩ | 30mΩ | 100V | 25A | 839pF | 1.6V | SGT工艺NMOS |
HG024N10L
|
TO-252
| 23mΩ | 25mΩ | 100V | 25A | 650pF | 1.5V | SGT工艺NMOS |
HG1037D
|
PDFN3*3
| 23mΩ | 25mΩ | 100V | 25A | 650pF | 1.5V | SGT工艺NMOS |
HG1006D
| PDFN3*3
| 25mΩ | 30mΩ | 100V | 25A | 839pF | 1.7V | SGT工艺NMOS |
HC1017D
| PDFN3*3
| 95mΩ | 100mΩ | 100V | 15A | 632pF | 1.7V | 沟槽型NMOS |
| HCD070N10L
|
PDFN3*3
| 82mΩ | 85mΩ | 100V | 15A | 950pF | 1.3V
| 沟槽型NMOS |
HG080N10L
| TO-252
| 75mΩ | 95mΩ | 100V | 15A | 310pF | 1.8V | SGT工艺NMOS |
HC070N10L
| |
82mΩ
| 85mΩ | 100V | 15A | 950pF | 1.3V | 沟槽型NMOS |
15N10
|
SOP-8
| 70mΩ | 79mΩ | 100V
| 15A
| 1200pF
| 1.9V
| 沟槽型NMOS
|
HC13N10
|
SOP-8
| 82mΩ | 85mΩ | 100V | 13A | 950pF | 1.3V | 沟槽型NMOS |
HG14N10
|
SOP-8
| 91mΩ | 115mΩ | 100V
| 13A | 210pF | 1.7V
| SGT工艺NMOS |
HG15N10
|
SOP-8
| 75mΩ | 95mΩ | 100V | 15A | 310pF | 1.8V | SGT工艺NMOS |
HC1040P
|
SOT89-3
| 70mΩ | 79mΩ | 100V | 12A | 1050pF | 1.9V | 沟槽型NMOS |
型号 | 封装 | Type Rdson
(VGS=-10V) | Type Rdson
(VGS=-4.5V) | Bvdss | ID | Ciss | type Vth | VGS | 类型 |
HC1017P
|
SOT89-3
| 80mΩ | 90mΩ | 100V | 12A | 1100pF | 1.6V | ±12V | 沟槽型PMOS |
HC070N10S
|
SOT23-3L
| 88mΩ | 95mΩ | 100V | 6A | 950pF | 1.3V | ±20V | 沟槽型PMOS |
HC5N10
|
SOT23
| 90mΩ | 97mΩ | 100V | 5A | 950pF | 1.3V | ±20V | 沟槽型PMOS |
HC6N10
|
SOT23-3L
| 88mΩ | 95mΩ | 100V | 6A | 950pF | 1.3V | ±20V | 沟槽型PMOS |
HC090N10L
|
TO-252
| 80mΩ | 90mΩ | 100V | 15A | 632pF | 1.7V | ±20V | 沟槽型PMOS |
HC12N10
|
SOP-8
| 80mΩ | 90mΩ | 100V | 12A | 1100pF | 1.6V | ±20V | 沟槽型PMOS |
HG610A
|
SOT23
| 80mΩ | 90mΩ | 100V | 5A | 180pF | 1.8V | ±20V | SGT工艺PMOS |
HG610B
|
SOT23
| 91mΩ | 115mΩ | -40V | 4A | 200pF | 1.7V | ±20V | SGT工艺PMOS |
HG510S
|
SOT23-3L
| / | 110mΩ | 100V | 5A | 225pF | 1.8V | ±20V | SGT工艺PMOS |
HG1033D
|
PDFN3*3
| 110mΩ | 130mΩ | 100V | 8A | 201pF | 1.7V | ±20V | SGT工艺PMOS |
HG1046S
|
SOP-8
| 110mΩ | 130mΩ | 100V | 8A | 201pF | 1.7V | ±20V | SGT工艺PMOS |
HG160N10L
|
TO-252
| 110mΩ | 130mΩ | 100V | 8A | 201pF | 1.7V | ±20V | SGT工艺PMOS |
HG160N10LS
|
SOT23
| 115mΩ | 135mΩ | 100V | 5A | 201pF | 1.7V | ±20V | SGT工艺PMOS |
HC1033D
|
PDFN3*3
| 143mΩ | 150mΩ | 100V | 8A | 405pF | 1.6V | ±20V | 沟槽型PMOS |
HC210N10LS
|
SOT23
| 201mΩ | 215mΩ | 100V | 3A | 170pF | 1.5V | ±20V | 沟槽型PMOS |
HC200N10L
|
TO-252
| 190mΩ | 205mΩ | 100V | 8A | 170pF | 1.3V | ±20V | 沟槽型NMOS |
HGA024N10L
|
TO-220
| 23mΩ | 25mΩ | 100V | 25A | 650pF | 1.4V | ±20V | SGT工艺PMOS |
HGB024N10L
|
TO-263
| 23mΩ | 25mΩ | 100V | 25A | 650pF | 1.5V | ±20V | SGT工艺PMOS |
HGA010N10L
|
TO-220
| 9mΩ | 12mΩ | 100V | 70A | 1590pF | 1.5 | ±20V | SGT工艺PMOS |
HGA002N10H
|
TO-220
| 2.8mΩ | / | 100V | 196A | 7243pF | 3V | ±20V | SGT工艺PMOS |
HGA004N10H
|
TO-220
| 4.6mΩ | / | 100V | 141A | 2944pF | 3V | ±20V | SGT工艺PMOS |
HGK016N12L
|
TO-252
| 16mΩ | 22mΩ | 120V | 45A | / | 1.7V | ±20V | SGT工艺PMOS |
HGE016N12L
|
PDFN5*6
| 16mΩ | 22mΩ | 120V | 4A | / | 1.7V | ±20V | SGT工艺PMOS |
HGK012N12L
|
TO-252
| 12mΩ | 17mΩ | 120V | 50A | / | 1.7V | ±20V | SGT工艺NMOS |
HGE012N12L
| PDFN5*6
| 12mΩ | 17mΩ | 120V | 50A | / | 1.7V | ±20V | SGT工艺NMOS |
HGK023N12L
|
TO-252
| 23mΩ | 30mΩ | 120V | 30A | / | 1.7V | ±20V | SGT工艺NMOS |
HGE023N12L
|
PDFN5*6
| 23mΩ | 30mΩ | 120V | 30A | / | 1.7V | ±20V | SGT工艺NMOS |
HC1545W
|
PDFN3*3
| 112mΩ | 119mΩ | 150V | 13A | 1600pF | 1.9V | ±20V | 沟槽型NMOS |
HC120N15L
| TO-252
| 122mΩ | 119mΩ | 150V | 15A | 1600pF | 1.9V | ±20V | 沟槽型NMOS |
HG1541S
|
SOT23
| 180mΩ | 200mΩ | 150V | 2A | /
| 2.5V | ±20V | SGT工艺NMOS |
HG200N15LS
|
SOP-8
| 180mΩ | 200mΩ | 150V | 5A | /
| 2.5V | ±20V | SGT工艺NMOS |
HG200N15LT
|
TO-252
| 180mΩ | 200mΩ | 150V | 5A | /
| 2.5V | ±20V | SGT工艺NMOS |
HC1519D
| PDFN3*3
| 242mΩ | 238mΩ | 150V | 6A | 855pF
| 1.8V | ±20V | 沟槽型NMOS |
HC240N15L
| TO-252
| 240mΩ | 245mΩ | 150V | 8A | 855pF
| 1.8V | ±20V | 沟槽型NMOS |
HC1535S
| SOT23
| 430mΩ | / | 150V | 1A | 372pF
| 2.5V | ±20V | 沟槽型NMOS |
HC1549S
|
SOT23
| / | 700mΩ | 150V | 0.5A | /
| 1.8V | / | 沟槽型NMOS |
HC080N15L
| TO-252
| 128mΩ | 129mΩ | 150V | 12A | 1600pF
| 1.1V | ±20V | 沟槽型NMOS |
HGK040N15L
|
TO-252
| 40mΩ | 45mΩ | 150V | 30A | /
| 1.3V | ±20V | SGT工艺NMOS |
HC450N20L
|
TO-252
| 490mΩ | 500mΩ | 200V | 5A | 655pF
| 1.7V | ±20V | 沟槽型NMOS |
HC240N20L
|
TO-252
| 240mΩ | 245mΩ | 200V | 8A | 1055pF
| 1.5V | ±20V | 沟槽型NMOS |
HCK1052N25L
|
TO-252
| 980mΩ | /
| 250V | 3.5A | 755pF
| 1.8V | ±20V | 沟槽型NMOS |
HCK450N25L
|
TO-252
| 420mΩ | 410mΩ | 250V | 7A | 1455pF | 1.3V | ±20V | 沟槽型NMOS |
| -20-200V P沟道MOSFET |
| 型号 | 封装 | Type Rdson (VGS=10V) | Type Rdson (VGS=4.5V) | Bvdss | ID | Ciss | type Vth | VGS | 类型 |
HCC2300
|
SOT23
| / | 15mΩ | 20V | 7A | / | 0.65V | ±12V | 沟槽型PMOS |
| HCC2302
|
SOT23
| / | 54mΩ | 20V | 3A | / | 0.65V | ±12V | 沟槽型PMOS |
| HCK002N02L
|
TO-252
| / | 2.4mΩ | 20V | 125A | 5670pF | 0.7V | ±12V | 沟槽型PMOS |
| HCE002N02L
|
PDFN5*6
| / | 2.4mΩ | 20V | 125A | 5670pF | 0.7V | ±12V | 沟槽型PMOS |
| HCE001N02L
|
PDFN5*6
| / | 1mΩ | 20V | 190A | / | 0.7V | ±12V | 沟槽型PMOS |
| HCC027N03L
|
SOT23
| 20mΩ | 30mΩ | 30V
| 7A | / | 1.5V | ±20V | 沟槽型PMOS |
| HCD027N03L
|
PDFN3*3
| 17mΩ | 27mΩ | 30V | 33A | / | 1.5V | ±20V | 沟槽型PMOS |
| HCK027N03L
|
TO-252
| 17mΩ | 27mΩ | 30V | 35A | / | 1.5V | ±20V | 沟槽型PMOS |
| HG3019P
|
SOT89-3
| / | 5mΩ | 30V | 50A | 745pF | 1.8V | ±20V | SGT工艺PMOS |
| HCD004N03L
|
PDFN3*3
| 4.5mΩ | 7.3mΩ | 30V | 90A | 1760pF | 1.8V | ±20V | 沟槽型PMOS |
| HCE004N03L
|
PDFN5*6
| 4.5mΩ | 7.3mΩ | 30V | 90A | 1760pF | 1.8V | ±20V | 沟槽型PMOS |
| HC90N03M
|
TO-252
| 4.5mΩ | 7.3mΩ | 30V | 90A | 1760pF | 1.8V | ±20V | 沟槽型PMOS |
| HCK003N03L
|
TO-252
| 2.8mΩ | 4.3mΩ | 30V | 120A | 2764pF | 1.5V | ±20V | 沟槽型PMOS |
| HCE003N03L
|
PDFN5*6
| 2.7mΩ | 4.2mΩ | 30V | 120A | 2764pF | 1.5V | ±20V | 沟槽型PMOS |
| HG004N03L
|
TO-252
| 4.8mΩ | 7.8mΩ | 30V | 75A | 745pF | 1.8V | ±20V | SGT工艺PMOS |
| HC005N03L
|
TO-252
| 5.8mΩ | 9mΩ | 30V | 70A | 1110pF | 1.8V | ±20V | 沟槽型PMOS |
| HC006N03M
|
TO-252
| 6.1mΩ | 8mΩ | 30V | 62A | 1264pF | 1.5V | ±20V | SGT工艺PMOS |
| HG3019D
|
PDFN3*3
| 4.8mΩ | 7.8mΩ | 30V | 68A | 745pF | 1.8V | ±20V | SGT工艺PMOS |
| HC009N03L
| TO-252 | 8mΩ | 12mΩ | 30V | 55A | 920pF | 1.5V | ±20V | 沟槽型PMOS |
| HCK008N03M
|
TO-252
| 8mΩ | 12mΩ | 30V | 55A | / | 1.5V | ±20V | 沟槽型PMOS |
| HC3022D
|
PDFN3*3
| 7.5mΩ | 13mΩ | 30V | 45A | 852pF | 1.8V | ±20V | 沟槽型PMOS |
| HC3039P
|
SOT89-3
| / | 18mΩ | 30V | 20A | 445pF | 1.8V | ±20V | 沟槽型PMOS |
| HC3039D
|
PDFN3*3
| 12.5mΩ | 24mΩ | 30V | 25A | 459pF | 1.8V | ±20V | 沟槽型PMOS |
| HC020N03L
|
TO-252
| 13mΩ | 22mΩ | 30V | 30A | 445pF | 1.6V | ±20V | 沟槽型PMOS |
| HC013N03M
|
TO-252
| 13mΩ | 16mΩ | 30V | 40A | / | 1.5V | ±20V | 沟槽型PMOS |
| HC3600M
|
SOT23-3L
| 16mΩ | 22mΩ | 30V | 8A | 445pF | 1.6V | ±20V | 沟槽型PMOS |
| HC3400M
|
SOT23-3L
| 21mΩ | 22mΩ | 30V | 5.8A | 635pF | 0.85V | ±12V | 沟槽型PMOS |
| HC3600G
|
SOT23
| 21mΩ | 35mΩ | 30V | 4.5A | 330pF | 1.8V | ±20V | 沟槽型PMOS |
| HC3400Y
|
SOT23
| / | 27mΩ | 30V | 5.8A | 835pF | 0.85V | ±12V | 沟槽型PMOS |
| HC3404Y
|
SOT23
| / | 27mΩ | 30V | 5.7A | 835pF | 1.5V | ±20V | 沟槽型PMOS |
| HC030N03L
|
TO-252
| / | 25mΩ | 30V | 20A | 745pF | 0.8V | ±12V | 沟槽型PMOS |
| HC3400S
|
SOT23
| / | 45mΩ | 30V | 4A | 235pF | 0.8V | ±20V | 沟槽型PMOS |
| HC3N04
|
SOT23
| 76mΩ | 83mΩ | 40V | 3A | 200pF | 1.2V | ±20V | 沟槽型PMOS |
备注：
1. 标注的Id电流是MOS芯片的最大常态电流，实际使用时的最大常态电流还要受封装的最大电流限制。因此客户设计产品时的最大使用电流设定要考虑封装的最大电流限制。建议客户设计产品时的最大使用电流设定更重要的是要考虑MOS的内阻参数。
2. 建议在MOS的栅源（G/S）极之间并一个电阻（10K）和一个稳压二极管(5V-12V)起到保护栅源（G/S）极过压的作用。
3.建议MOS管的开启电压尽量提高，这样MOS管才能充分开启导通，这个时候内阻最小，不容易发烫。一般建议低压MOS的VGS开启电压设定为4.5V以上，中高压MOS的开启电压设定为10V以上.
4.MOS 电路操作注意事项：
静电在很多地方都会产生，采取下面的预防措施，可以有效防止MOS 电路由于受静电放电影响而引起的损坏：
• 操作人员要通过防静电腕带接地。
• 设备外壳必须接地。
• 装配过程中使用的工具必须接地。
• 必须采用导体包装或抗静电材料包装或运输
