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Product Selection
产品选型
——
20-250V PDFN3*3、TO-252、SOP-8、SOT23-3、SOT89-3、TO-220、TO-263、PDFN5*6

全系列NMOS和PMOS



20-250V N沟道MOSFET
型号
封装

Rdson

(VGS= 10V)

Rdson

( VGS=4.5V)

Bvdss
ID
Ciss
type VthHCP
类型
HCC2300

20201201


SOT23


/
16mΩ20V
7A
280pF
0.65V

沟槽型NMOS

HCC2302

20201201


SOT23


/
43mΩ20V
3A
180pF
0.65V

沟槽型NMOS

HCK002N02L

20201201


TO-252


/2.4mΩ20V125A5670pF0.7V

沟槽型NMOS

HCE002N02L

20201201

PDFN5*6


/


2.4mΩ
20V
125A
5670pF
0.7V

沟槽型NMOS

HCE001N02L

20201201

PDFN5*6


/


1mΩ
20V
190A
5670pF
0.7V

沟槽型NMOS

HCK006N02L

20201201

TO-252


/6.4mΩ20V50A1590pF0.85V沟槽型NMOS

HCC027N03L

20201106

SOT23


20mΩ


30mΩ
30V7A405pF
1.5V

沟槽型NMOS

HCD027N03L

20201201

PDFN3*3


17mΩ


27mΩ
30V
33A
465pF
1.5V

沟槽型NMOS

HCK027N03L

20201201

TO-252


17mΩ


27mΩ
30V
35A
465pF
1.5V

沟槽型MOS

HG3019P

20201106


SOT89-3


/

5mΩ
30V
50A
745pF
1.8V

SGT工艺NMOS

HCD004N03L

20201201

PDFN3*3


4.5mΩ


7.3mΩ
30V
90A
1760pF
1.8V

沟槽型NMOS

HCE004N03L

20201201


PDFN5*6


4.5mΩ

7.3mΩ
30V
90A
1760pF
1.8V

沟槽型NMOS

HC90N03M

20201201


TO-252


4.5mΩ7.3mΩ30V90A1760pF1.8V

沟槽型NMOS

HCP4A5N03L

20201201


SOT89-3


4.5mΩ7.3mΩ30V18A1760pF1.8V

沟槽型NMOS

HCK003N03L

20201201


TO-252



2.8mΩ


4.3mΩ
30V
120A
2764pF
1.5V

沟槽型NMOS

HCE003N03L

20201201

PDFN5*6


2.7mΩ


4.2mΩ
30V
120A
2764pF
1.5V

沟槽型NMOS

HCK006N03L

20201201


TO-252


/

6.2mΩ
30V
45A
1264pF
0.85V

沟槽型NMOS

HCD006N03L

20201201


PDFN3*3


/

6.2mΩ
30V
42A
1264pF
0.85V

沟槽型NMOS

HG004N03L

20201201


TO-252


4.8mΩ

7.8mΩ
30V
75A
745pF
1.8V

SGT工艺NMOS

HC005N03L

20201201

TO-252


5.8mΩ


9mΩ
30V
70A
1110pF
1.8V

沟槽型NMOS

HC006N03M

20201106


TO-252


6.1mΩ8mΩ
30V
62A
1264pF
1.5V

沟槽型NMOS

HG3019D

20201106


PDFN3*3


4.8mΩ


7.8mΩ
30V
68A
745pF
1.8V

SGT工艺NMOS

HC009N03L

20201201

TO-252


8mΩ


12mΩ
30V
55A
845pF
1.9V

沟槽型NMOS

HCK008N03M

20201201


TO-252


8mΩ

12mΩ
30V
55A
/
1.5V

沟槽型NMOS

HC3022D

20201201


PDFN3*3


7.5mΩ

13mΩ
30V
45A
852pF
1.8V

沟槽型NMOS

HC3039P

20201201


SOT89-3


/18mΩ30V20A445pF1.8V沟槽型NMOS

HC3039D

20201201


PDFN3*3


12.5mΩ24mΩ30V25A459pF1.8V沟槽型NMOS

HC020N03L

20201201


TO-252


13mΩ22mΩ30V30A445pF1.6V沟槽型NMOS

HC013N03M

20201201


TO-252


17mΩ20mΩ30V40A770pF1.5V沟槽型NMOS

HC3600M

20201201


SOT23-3L


16mΩ22mΩ30V8A445pF1.6V沟槽型NMOS

HC3400M

20201201

SOT23-3L


21mΩ


22mΩ
30V
5.8A
635pF
0.85V

沟槽型NMOS

HCC3400M

20201201


SOT23


21mΩ22mΩ30V5.6A635pF0.85V

沟槽型NMOS

HCP3400M

20201201


SOT89-3


21mΩ22mΩ30V15A635pF0.85V

沟槽型NMOS

HC3600G

20201201

SOT23

   

21mΩ


35mΩ
30V
4.5A
330pF
1.8V

沟槽型NMOS

HC3400Y

20201201

SOT23


/


27mΩ
30V
5.8A
835pF
0.85V

沟槽型NMOS

HCC3400Z

20201201


SOT23


24mΩ28mΩ30V5.1A521pF0.9V沟槽型NMOS
HCP3400Y

20201201


SOT89-3


/27mΩ30V10A835pF0.85V沟槽型NMOS

HC3404Y

20201201

SOT23


/


27mΩ
30V
5.7A
835pF
1.5V

沟槽型NMOS

HC030N03L

20201106

TO-252

/


25mΩ
30V
20A
745pF
0.8V

沟槽型NMOS

HC3400S

20201106


SOT23


/

45mΩ
30V
4A
235pF
0.8V

沟槽型NMOS

HC3N04

20201106

SOT23


76mΩ
83mΩ
40V
3A
200pF
1.2V

沟槽型NMOS

HC4N04

20201201

SOT23


30mΩ


38mΩ
40V
4A
381pF
1.5V

沟槽型NMOS

HC5N04

20201201


SOT23-3L


15mΩ

21mΩ
40V
6.5A
681pF
1.5V

沟槽型NMOS

HC4012D

20201201

PDFN3*3


6.9mΩ


8.2mΩ
40V
38A
2094pF
1.5V

沟槽型NMOS

HCK011N04L

20201201


TO-252



11.5mΩ


15.5mΩ
40V
35A
1314pF
1.5V

沟槽型NMOS

HCD40N11L

20201201

PDFN3*3


2.9mΩ


3.5mΩ
40V
90A
/
1.5V

沟槽型NMOS

HCE40N11L

20201201

PDFN5*6


2.9mΩ


3.7mΩ
40V
120A
6130pF
1.5V

沟槽型NMOS

HC007N04L

20201106

TO-252


6.7mΩ


7.9mΩ
40V
57A
2094pF
1.5V

沟槽型NMOS

HCK003N04L

20201201

TO-252


2.9mΩ


3.7mΩ
40V
130A
6130pF
1.5V

沟槽型NMOS

HGK001N04L

20201201

TO-252


1.6mΩ


2.2mΩ
40V
170A
3565pF
1.7V

SGT工艺NMOS

HGE001N04L

20201106

PDFN5*6


1.6mΩ


2.2mΩ
40V
170A
3565pF
1.7V

SGT工艺NMOS

HGK004N04

20201106

TO-252


5.2mΩ


7mΩ
40V
85A
1105pF
1.7V

SGT工艺NMOS

HGE004N04L

20201201

PDFN5*6


5.2mΩ


7mΩ
40V
85A
1105pF
1.7V

SGT工艺NMOS

HGD004N04L

20201201

PDFN3*3


5.2mΩ


7mΩ
40V
72A
1105pF
1.7V

SGT工艺NMOS

HCK004N04L

20201201

TO-252


3.9mΩ


5.5mΩ
40V
95A
3260pF
1.7V

沟槽型NMOS

HCE004N04L

20201201

PDFN5*6


3.9mΩ


5.5mΩ
40V
95A
3260pF
1.7V

沟槽型NMOS

HCD004N04L

20201201

PDFN3*3


3.9mΩ


5.5mΩ
40V
75A
3260pF
1.7V

沟槽型NMOS

HC7002

20201201

SOT23


/


1.6Ω
60V
0.1A
/
1.8V

沟槽型NMOS

HCC2N7002K

20201201

SOT23


1.7Ω


1.8Ω
60V
0.3A
28pF
1.5V

沟槽型NMOS

HG008N06LS

20201201

SOP-8


8mΩ


10mΩ
60V
16A
660pF
1.6V

SGT工艺NMOS

HCK007N06L

20201201

TO-252


7.5mΩ


9.5mΩ
60V
65A
2511pF
1.5V

沟槽型NMOS

HG012N06HS

20201201


SOP-8


10.5mΩ17mΩ60V13A780oF1.8VSGT工艺NMOS

HG6025P

20201201

SOT89-3


8mΩ


10mΩ
60V
65A
650pF
1.8V

SGT工艺NMOS



型号
封装

Rdson

(VGS=10V)

Rdson

(VGS=4.5V)

Bvdss
ID
Ciss
type Vth
类型

HG008N06L

20201201


TO-252



8mΩ


10mΩ
60V
70A
650pF
1.8V

SGT工艺NMOS

HGE008N06L

20201201


PDFN5*6


8mΩ10mΩ60V70A
650pF
1.8VSGT工艺NMOS

HCK007N06L

20201201


TO-252



7.5mΩ


9.5mΩ
60V
65A
2511pF
1.5V

沟槽型NMOS

HG012N06HS

20201201


SOP-8



10.5mΩ


17mΩ
60V
13A
780pF
1.8V

SGT工艺NMOS

HG6037D

20201201


PDFN3*3


10mΩ

14mΩ
60V
40A
742pF
1.7V

SGT工艺NMOS

HG011N06L

20201201

TO-252


10mΩ


14mΩ
60V
50A
742pF
1.7V

SGT工艺NMOS

HG6013P

20201201

SOT89-3


11mΩ


15mΩ
60V
40A
550pF
1.6V

SGT工艺NMOS

HGP009N06L

20201201


SOT89-3


9mΩ13mΩ60V45A1056pF1.8VSGT工艺NMOS

HGD009N06L

20201201



PDFN3*3


9mΩ13mΩ60V55A1056pF1.8VSGT工艺NMOS

HGK009N06L

20201201


TO-252


9mΩ13mΩ60V55A1056pF1.8VSGT工艺NMOS

HG6037P

20201201


SOT89-3


/

13mΩ
60V
40A
/
1.6V

SGT工艺NMOS

HC6013P

20201201


SOT89-3


/
17mΩ
60V
40A
1050pF
1.8V

沟槽型NMOS

HC017N06L

20201201


TO-252


17mΩ
21mΩ
60V
40A
1030pF
1.5V

沟槽型NMOS

HC015N06L

20201106


TO-252


12mΩ15mΩ60V50A1050pF1.5V

沟槽型NMOS

HCK016N06L

20201106


TO-252


14mΩ17mΩ60V50A1000pF1.5V沟槽型NMOS

HC010N06L

20201106


TO-252


8.9mΩ10.9mΩ60V60A2411pF1.5V

沟槽型NMOS

HC037N06L

20201201


TO-252


28mΩ
30mΩ
60V
30A
650pF
1.8V

沟槽型NMOS

HC031N06L

20201201


TO-252


26mΩ
36mΩ
60V
25A
1082pF
1.6V

沟槽型NMOS

HCK029N06L

20201106


TO-252


29mΩ
35mΩ
60V
22A
1052pF
1.5V

沟槽型NMOS

HCD031N06L

20201106


PDFN3*3


26mΩ
30mΩ
60V
25A
1082pF
1.6V

沟槽型NMOS


HCP031N06L

20201106



SOT89-3


26mΩ
36mΩ
60V
12A
1082pF
1.6V

沟槽型NMOS

HC6019D

20201201


PDFN3*3


29mΩ
32mΩ
60V
20A
650pF
1.6V

沟槽型NMOS

HC037N06LS

20201106


SOP-8


31mΩ
34mΩ
60V
8A
650pF
1.8V

沟槽型NMOS

HC070N06L

20201106


SOT23


65mΩ
80mΩ
60V
15A
435pF
1.5V

沟槽型NMOS

HC706

20201106


SOP8


60mΩ
70mΩ
60V
7A
435pF
1.8V

沟槽型NMOS

HC070N06LS

20201201


SOT23


65mΩ
80mΩ
60V
6A
435pF
1.5V

沟槽型NMOS

HGE004N06L

20201201


PDFN5*6


4.7mΩ
6.5mΩ
60V
90A
2133pF
1.8V

SGT工艺NMOS

HGK004N06

20201201


TO-252


4.7mΩ
6.5mΩ
60V
90A
2133pF
1.8V

SGT工艺NMOS

HGA004N06L

20201201


TO-263


4mΩ
6mΩ
60V
120A
2133pF
1.8V

SGT工艺NMOS

HGE2R2N06L

20201201


PDFN5*6


2.2mΩ3mΩ60V155A3680pF1.8V

SGT工艺NMOS

HGK2R2N06L

20201201


TO-252


2.2mΩ3mΩ60V155A3680pF1.8V

SGT工艺NMOS

HGE2R26N06L

20201201


PDFN5*6


2.6mΩ3.4mΩ60V120A4240pF1.5V

SGT工艺NMOS

HGK2R6N06L

20201201


TO-252


2.6mΩ3.4mΩ60V120A4240pF1.5V

SGT工艺NMOS

HGA008N06L

20201201


TO-220


8mΩ
10mΩ
60V
70A
650pF
1.8V

SGT工艺NMOS

HGK013N06L

20201201


TO-252


13mΩ21mΩ65V45A440pF1.9VSGT工艺NMOS

HGD013N06L

20201201


PDFN3*3


13mΩ21mΩ65V45A440pF1.9VSGT工艺NMOS

HCA006N68H

20201201


TO-220


5.2mΩ
/
68V
100A
4723pF
3V

沟槽型NMOS

HC230N08LS

20201201


SOT23


230mΩ
255mΩ
85V
4A
405pF
1.8V

沟槽型NMOS

HG008N10L

20201201


TO-252


8mΩ
10mΩ
100V
82A
1406pF
1.7V

SGT工艺NMOS


HG1015DA

20201106


PDFN5*6

9mΩ
12mΩ
100V
70A
1630pF
1.5V

SGT工艺NMOS

HG010N10L

20201201


TO-252


9mΩ
12mΩ
100V
70A
1630pF
1.5V

SGT工艺NMOS

HG1006DA

20201106


PDFN5*6


20mΩ
24mΩ
100V
25A
839pF
1.6V

SGT工艺NMOS

HG018N10LS

20201106


SOP-8


20mΩ
24mΩ
100V
12A
839pF
1.7V

SGT工艺NMOS

HC1006D

20201106


PDFN3*3


22mΩ
24mΩ
100V
30A
2100pF
1.3V

沟槽型NMOS

HC025N10L

20201106


TO-252


24mΩ
28mΩ
100V
45A
2000pF
1.2V

沟槽型NMOS

HC032N10L

20201106


TO-252


32mΩ
37mΩ
100V
30A
1800pF
1.5V

沟槽型NMOS

HC8N10

20201106


SOP-8


27mΩ
28mΩ
100V
8A
2000pF
1.2V

沟槽型NMOS

HG021N10L

20201106

TO-252


25mΩ
30mΩ
100V
25A
893pF
1.6V

SGT工艺NMOS

HG024N10L

20201106


TO-252


23mΩ25mΩ100V25A650pF
1.5V
SGT工艺NMOS

HGE024N10L

20201106


PDFN5*6


20mΩ24mΩ100V40A544pF1.4V SGT工艺NMOS

HGK015N10L

20201106


TO-252


15mΩ19mΩ100V50A1050pF1.7VSGT工艺NMOS

HGE015N10L

20201106


PDFN5*6


13mΩ16mΩ100V45A980pF1.7VSGT工艺NMOS

HG1037D

20201106


PDFN3*3


23mΩ25mΩ100V25A650pF
1.5V
SGT工艺NMOS

HG1006D

20201106

PDFN3*3


25mΩ
30mΩ
100V
25A
839pF
1.7V
SGT工艺NMOS
HCD070N10L

20201106


PDFN3*3


82mΩ85mΩ100V15A950pF1.3V
沟槽型NMOS

HG080N10L

20201106


TO-252


75mΩ
95mΩ
100V
15A
310pF
1.8V

SGT工艺NMOS

HGK075N10L

20201201


TO-252


75mΩ95mΩ100V15A/1.65VSGT工艺NMOS

HC070N10L

20201201

TO-252


82mΩ


85mΩ
100V
15A
950pF
1.3V

沟槽型NMOS

15N10

20201201


SOP-8


70mΩ79mΩ100V
15A
1200pF
1.9V
沟槽型NMOS

HC13N10


SOP-8


82mΩ85mΩ100V13A950pF1.3V沟槽型NMOS

HG14N10

20201201


SOP-8


91mΩ115mΩ100V
13A210pF1.7V
SGT工艺NMOS

HG15N10

20201201


SOP-8


75mΩ95mΩ100V15A310pF1.8VSGT工艺NMOS




型号

封装

Type Rdson
(VGS=-10V)

Type Rdson
(VGS=-4.5V)

Bvdss

ID

Ciss

type Vth

类型

HC1017P

20201201


SOT89-3


80mΩ

90mΩ

100V

12A

1100pF

1.6V

沟槽型MOS

HC070N10S

20201201


SOT23-3L


88mΩ

95mΩ

100V

6A

950pF

1.3V

沟槽型NMOS

HC5N10

20201201


SOT23


90mΩ

97mΩ

100V

5A

950pF

1.3V

沟槽型NMOS

HC6N10

20201201


SOT23-3L


88mΩ

95mΩ

100V

6A

950pF

1.3V

沟槽型NMOS

HC090N10L

20201201


TO-252


80mΩ90mΩ110V15A632pF1.7V沟槽型NMOS

HC12N10

20201201


SOP-8


80mΩ90mΩ100V12A1100pF1.6V沟槽型NMOS

HG610A

20201201


SOT23


80mΩ90mΩ100V5A180pF1.8VSGT工艺NMOS

HG610B

20201201


SOT23


91mΩ

115mΩ

100V

4A

200pF

1.7V

SGT工艺NMOS

HG510S

20201201


SOT23-3L


/

110mΩ

100V

5A

225pF

1.8V

SGT工艺NMOS

HG1033D

20201201


PDFN3*3


110mΩ

130mΩ

100V

8A

201pF

1.7V

SGT工艺NMOS

HG1046S

20201201


SOP-8


110mΩ

130mΩ

100V

8A

201pF

1.7V

SGT工艺NMOS

HG160N10L

20201201


TO-252


110mΩ

130mΩ

100V

8A

201pF

1.7V

SGT工艺NMOS

HG160N10LS

20201201


SOT23


115mΩ

135mΩ

100V

5A

201pF

1.7V

SGT工艺NMOS

HC1033D

20201201


PDFN3*3


143mΩ

150mΩ

100V

8A

405pF

1.6V

沟槽型NMOS

HC210N10LS

20201201


SOT23


201mΩ215mΩ100V3A170pF1.5V

沟槽型NMOS

HC200N10L

20201201


TO-252


190mΩ

205mΩ

100V

8A

170pF

1.3V

沟槽型NMOS

HGA024N10L

20201201


TO-220


23mΩ

25mΩ

100V

25A

650pF

1.4V

SGT工艺NMOS

HGB024N10L

20201201


TO-263


23mΩ

25mΩ

100V

25A

650pF

1.5V

SGT工艺NMOS

HGA010N10L

20201201


TO-220


9mΩ12mΩ100V70A1590pF1.5

SGT工艺NMOS

HGA002N10H

20201201


TO-220


2.8mΩ

/

100V

196A

7243pF

3V

SGT工艺NMOS

HGA004N10H

20201201


TO-220


4.6mΩ

/

100V

141A

2944pF

3V

SGT工艺NMOS

HGE006N10L

20201201


PDFN5*6


6mΩ7.5mΩ100V85A/1.7V

SGT工艺NMOS

HGK006N10L

20201201


TO-252


5.2mΩ6.7mΩ100V80A2208pF1.7V

SGT工艺NMOS

HGK130N12L

20201201


TO-252


130mΩ160mΩ120V10A/1.7V

SGT工艺NMOS

HGC130N12L

20201201


SOT23


135mΩ165mΩ120V5A/1.7V

SGT工艺NMOS

HGD130N12L

20201201


PDFN3*3


130mΩ160mΩ120V10A/1.7V

SGT工艺NMOS

HGC170N12L

20201201


SOT23


175mΩ200mΩ120V3A/1.3V

SGT工艺NMOS

HGK032N12L

20201201


TO-252


32mΩ42mΩ120V22A1290pF1.7V

SGT工艺NMOS

HGE032N12L

20201201


PDFN5*6


32mΩ42mΩ12020A/1.7V

SGT工艺NMOS

HGK016N12L

20201201


TO-252


16mΩ22mΩ120V45A/1.7VSGT工艺NMOS

HGE016N12L

20201201


PDFN5*6


16mΩ22mΩ120V40A/1.7VSGT工艺NMOS

HGK012N12L

20201201


TO-252


14mΩ15mΩ120V50A3200pF

1.6V

SGT工艺NMOS

HGE012N12L

20201201

PDFN5*6


14mΩ15mΩ120V50A1960pF1.6VSGT工艺NMOS

HGK023N12L

20201201


TO-252


23mΩ30mΩ120V30A960pF1.7VSGT工艺NMOS

HGE023N12L

20201201


PDFN5*6


23mΩ30mΩ120V30A960pF1.7VSGT工艺NMOS

HC1545W

20201201


PDFN3*3


112mΩ119mΩ150V13A1600pF1.9V沟槽型NMOS

HC120N15L

20201201

TO-252


122mΩ119mΩ150V15A1600pF1.9V沟槽型NMOS

HG1541S

20201201


SOT23


180mΩ200mΩ150V2A/
2.5VSGT工艺NMOS

HG200N15LS

20201201


SOP-8


180mΩ200mΩ150V5A/
2.5VSGT工艺NMOS

HG200N15LT

20201201


TO-252


180mΩ200mΩ150V5A/
2.5VSGT工艺NMOS

HC1519D

20201201


PDFN3*3


242mΩ238mΩ150V6A855pF
1.8V沟槽型NMOS

HC240N15L

20201201


TO-252


240mΩ245mΩ150V8A855pF
1.7V沟槽型NMOS
HCK245N15L

20201201


TO-252


230mΩ226mΩ150V8A785pF0.9V沟槽型NMOS
HCD245N15L

20201201


PDFN3*3


230mΩ226mΩ150V8A785pF0.9V沟槽型NMOS
HCM245N15L

20201201


SOT23-3L


235mΩ231mΩ150V3A785pF0.9V沟槽型NMOS

HC1535S

20201201


SOT23


430mΩ/150V1A372pF
2.5V沟槽型NMOS

HC1549S

20201201


SOT23


/700mΩ150V0.5A/
1.8V沟槽型NMOS

HC080N15L

20201201


TO-252


128mΩ129mΩ150V12A1600pF
1.1V沟槽型NMOS

HGK040N15L

20201201


TO-252


40mΩ45mΩ150V30A986pF1.3VSGT工艺NMOS
HGA040N15L

20201201

 

TO-220


40mΩ45mΩ150V40A986pF1.3VSGT工艺NMOS
HGK028N15L

20201201

TO-252


28mΩ34mΩ150V45A690pF1.8VSGT工艺NMOS
HGE028N15L

20201201


PDFN5*6


28mΩ34mΩ150V45A690pF1.8VSGT工艺NMOS
HGA028N15L

20201201


TO-220


28mΩ34mΩ150V55A690pF1.8VSGT工艺NMOS
HGK055N15L

20201201


TO-252


52mΩ65mΩ150V20A620pF1.8VSGT工艺NMOS
HGE055N15L

20201201


PDFN5*6


52mΩ65mΩ150V20A620pF1.8VSGT工艺NMOS

HC450N20L

20201201


TO-252


490mΩ500mΩ200V5A655pF
1.7V沟槽型NMOS

HC240N20L

20201201


TO-252


240mΩ245mΩ200V8A1055pF
1.5V沟槽型NMOS

HCK1052N25L

20201201


TO-252


980mΩ/
250V3.5A755pF
1.8V沟槽型NMOS

HCK450N25L

20201201


TO-252


420mΩ410mΩ250V7A1455pF1.3V沟槽型NMOS



-20-200V P沟道MOSFET
型号封装

Type Rdson

(VGS=10V)

Type Rdson

(VGS=4.5V)

BvdssIDCisstype VthVGS类型

HCK006P02L

20201201


TO-252


/6.5mΩ-20V-70A5783pF-0.6V±12V沟槽型PMOS
HCD006P02L

20201201


PDFN3*3


/7.9mΩ-20V-50A3820pF-0.6V±12V沟槽型PMOS
HC3401M

20201201


SOT23


48mΩ56mΩ-30V-4.5A880pF-1V±12V沟槽型PMOS
HC3407Y

20201201


SOT23


60mΩ65mΩ-30V-3.3A680pF-1.6V±20V沟槽型PMOS
HC3407A

20201201


SOT23


37mΩ50mΩ-30V-4.1A443pF-1.6V±20V沟槽型PMOS
HCD006P03L

20201201


PDFN3*3


6.5mΩ10.3mΩ-30V-60A3240pF-1.5V±20V沟槽型PMOS
HC4P04M

20201201


SOT23


46mΩ56mΩ-40V-4.2A759pF-1.5V±20V沟槽型PMOS
HCC3P04

20201201


SOT23


83mΩ90mΩ-40V-3A/-1.5V±20V沟槽型PMOS
HC4P04

20201201


SOT23-3L


50mΩ55mΩ-40V-4A/-1.5V±20V沟槽型PMOS
HC5P04

20201201


SOT23-3L


30mΩ41mΩ-40V-5A1021pF-1.5V±20V沟槽型PMOS
HC6P04M

20201201


TO-252


42mΩ51mΩ-40V-17A759pF-1.5V±20V沟槽型PMOS
HC010P04M

20201201


TO-252


10mΩ13mΩ-40V-57A3241pF-1.7V±20V沟槽型PMOS
HC030P04M

20201201


TO-252


30mΩ41mΩ-40V-24A1021pF-1.7V±20V沟槽型PMOS
HC40P59P

20201201


SOT89-3


30mΩ41mΩ-40V-24A1021pF-1.7V±20V沟槽型PMOS
HC045P04M

20201201


TO-252


36mΩ48mΩ-40V-30A/-1.5V±20V沟槽型PMOS
HCB003P04L

20201201


TO-263


3.1mΩ5.1mΩ-40V-150A10733pF-1.7V±20V沟槽型PMOS
HCE003P04L

20201201


PDFN5*6


3.1mΩ5.1mΩ-40V-140A10733pF-1.7V±20V沟槽型PMOS

HCC160P06L

20201201


SOT23


160mΩ190mΩ-60V-2A620pF-1.7V±20V沟槽型PMOS

HCC115P06L

20201201


SOT23


115mΩ130mΩ-60V-3A961pF-1.7V±20V沟槽型PMOS

HCD115P06L

20201201


PDFN3*3


108mΩ125mΩ-60V-10A/-1.7V±20V沟槽型PMOS
HC5P06L

20201201


SOT23-3L


73mΩ89mΩ-60V-3.7A1450pF-1.8V±20V沟槽型PMOS
HCD084P06L

20201201


PDFN3*3


73mΩ89mΩ-60V-15A1450pF-1.8V±20V沟槽型PMOS
HC18P06L

20201201


TO-252


60mΩ69mΩ-60V-1.8A2065pF-1.8V±20V沟槽型PMOS
HC60P38D3

20201201


PDFN3*3


61mΩ70mΩ-60V-10A2065pF-1.7V±20V沟槽型PMOS
HC35P06L

20201201


TO-252


24mΩ30mΩ-60V-35A4026pF-1.7V±20V沟槽型PMOS
HC56P06L

20201201


TO-252


12mΩ14mΩ-60V-56A8700pF-1.8V±20V沟槽型PMOS
HCC2P10L

20201201


SOT23


278mΩ297mΩ-100V-2A1198pF-1.8V±20V沟槽型PMOS
HCP2P10L

20201201


SOT89-3


278mΩ297mΩ-100V-2A1198pF-1.8V±20V沟槽型PMOS
HCM150P10L

20201201


SOT23-3L


146mΩ152mΩ-100V-4A1980pF-1.8V±20V沟槽型PMOS
HCK150P10L

20201201


TO-252


150mΩ152mΩ-100V-15A1980pF-1.8V±20V沟槽型PMOS
HCK300P10L

20201201


TO-252


282mΩ302mΩ-100V-7.5A1199pF-1.8V±20V沟槽型PMOS
HCD300P10L

20201201


PDFN3*3


282mΩ302mΩ-100V-10.5A1199pF-1.8V±20V沟槽型PMOS
HC090P10L

20201201


TO-252


86mΩ90mΩ-100V-28A3700pF-1.8V±20V沟槽型PMOS
HCD090P10L

20201201


PDFN3*3

86mΩ90mΩ-100V-28A3700pF-1.8V±20V沟槽型PMOS
HCK065P10L

20201201


TO-252


65mΩ68mΩ-100V-40A7056pF-1.8V±20V沟槽型PMOS

HCD065P10L

20201201


PDFN3*3


65mΩ69mΩ-100V-40A7056pF-1.8V±20V沟槽型PMOS
HC040P10L

20201201


TO-252


40mΩ42mΩ-100V-50A8056pF-1.8V±20V沟槽型PMOS
HCA040P10L

20201201


TO-220


40mΩ42mΩ-100V-50A8056pF-1.8V±20V沟槽型PMOS

HCA090P10L

20201201


TO-220


86mΩ90mΩ-100V-30A3700pF-1.8V±20V沟槽型PMOS
HC240P15H

20201201


TO-252


266mΩ/-150V-8A2069pF-2.5V±20V沟槽型PMOS
HCK078P15L

20201201


TO-252


78mΩ83mΩ-150V-20A8178pF-1.9V±20V沟槽型PMOS
HCK172P20L

20201201


TO-252


172mΩ174mΩ-200V-20A3069pF-1.8V±20V沟槽型PMOS
友情链接：深圳市惠新晨电子有限公司
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